Anomalous Surface Doping Effect in Semiconductor Nanowires

Towards controlled Doping in III-V Semiconductor Nanowires

Nanowires are quasi-one-dimensional single crystals with lateral dimensions that can be scaled-down to only a few nanometers. They can simultaneously act as active components and interconnects and therefore fulfill the two basic functions of any active device. However, controlled doping of III-V nanowires is challenging due to strong Fermi-level pinning as well as the kinetic and thermodynamic ...

Anomalous Josephson effect induced by spin-orbit interaction and Zeeman effect in semiconductor nanowires

We investigate theoretically the Josephson junction of semiconductor nanowire with strong spin-orbit (SO) interaction in the presence of magnetic field. By using a tight-binding model, the energy levels En of Andreev bound states are numerically calculated as a function of phase difference φ between two superconductors in the case of short junctions. The dc Josephson current is evaluated from t...

Surface Optical Mode in Semiconductor Nanowires

Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor.

Ferromagnetic semiconductors are believed to be suitable for future spintronics, because both charge and spin degrees of freedom can be manipulated by external stimuli. One of the most important characteristics of ferromagnetic semiconductors is the anomalous Hall effect. This is because the ferromagnetically spin-polarized carrier can be probed and controlled electrically, leading to direct ap...

The effect of Mg doping on GaN nanowires

We present a comparison between the structural, chemical, and electrical properties of Mg-doped GaN nanowires grown by hot-wall chemical vapor deposition using two different Mg sources, namely, metaloorganic bis(methylcyclopentadienyl) magnesium and magnesium nitride powder. We find that Mg from the solid nitride source is more effectively incorporated into the nanowires while better maintainin...